Mg-doped AlGaN grown on an AlN/sapphire template by metalorganic chemical vapour deposition
نویسندگان
چکیده
The growth of high-performance Mg-doped p-type Al x Ga1–xN (x = 0.35) layers using low-pressure metalorganic chemical vapour deposition on an AlN/sapphire template is reported. The influence of growth conditions on the p-type conductivity of the Al x Ga1–xN (x = 0.35) alloy was investigated. It was found that the p-type resistivity of the AlGaN alloy demonstrates a marked dependence on the Mg concentration, V/III ratio and group III element flow rate. A minimum p-type resistivity of 3.5 Ω cm for Al x Ga1–xN (x = 0.35) epilayers was achieved. A Ni/Au (10 nm/100 nm) ohmic contact was also fabricated and a specific contact resistivity of 8.1 × 10 Ω cm was measured.
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